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PHB191NQ06LT Datasheet, NXP Semiconductors

PHB191NQ06LT fet equivalent, n-channel trenchmos logic level fet.

PHB191NQ06LT Avg. rating / M : 1.0 rating-13

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PHB191NQ06LT Datasheet

Features and benefits


* Low conduction losses due to low on-state resistance
* Suitable for logic level gate drive sources 1.3 Applications
* DC-to-DC convertors
* General in.

Application

only. 1.2 Features and benefits
* Low conduction losses due to low on-state resistance
* Suitable for logic le.

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Feature.

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TAGS

PHB191NQ06LT
N-channel
TrenchMOS
logic
level
FET
NXP Semiconductors

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