PHB191NQ06LT fet equivalent, n-channel trenchmos logic level fet.
* Low conduction losses due to low on-state resistance
* Suitable for logic level gate drive sources
1.3 Applications
* DC-to-DC convertors
* General in.
only.
1.2 Features and benefits
* Low conduction losses due to low on-state resistance
* Suitable for logic le.
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Feature.
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